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Si charged particle radiation detector for alpha spectrum measurements

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Si charged particle radiation detector for alpha spectrum measurements

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    Si charged particle radiation detector for alpha spectrum measurements

    Product model:

    Brief description:Application areas seen in energy spectroscopy are radiochemistry, health physics and screening of environmental samples

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    Detailed introduction

    Application areas seen in alpha spectroscopy are radiochemistry, health physics and screening of environmental samples. Silicon radiation detectors for these applications are the ULTRA radiation detectors with depletion depth ≥100 microns and the ULTRA-AS radiation detectors with ultra-low background.

    In addition, many facilities continue to use ruggedized (R-series) surface barrier radiation detectors that have low background and are opaque. The "SEE-NO-ALPHA" option provides guaranteed resolution specifications and lack of exposure to alpha sources prevents backscatter contamination.

    *All resolution measurements performed and guaranteed at 21±1°C.

    **Measured using 5.486-MeV natural alpha particles.

    † ULTRA series detectors are manufactured using ion-implanted silicon dioxide passivation technology. Versions allowing baking at 200°C are available for special order.

    ULTRA†

    ULTRA AS†

    Main applications

    High-resolution, high-efficiency alpha and beta spectrum measurements

    High-efficiency alpha spectroscopy measurement with ultra-low background

    Main features/Advantages

    • Uses ultra-thin contact stages to provide energy resolution
    • High efficiency through ad hoc spacing
    • Use surface passivation technology to ensure device stability
    • Extra long life gold plating protection
    • High quality and reliability
    • Uses ultra-thin contact stages to provide energy resolution
    • High efficiency through ad hoc spacing
    • Use surface passivation technology to ensure device stability
    • Extra long life gold plating protection
    • High quality and reliability

    starting materials

    Si

    Si

    Effective area range (mm2)

    25-3000

    300–1200

    Effective thickness range (µm)

    100-500

    100

    Guaranteed operating temperature range*

    +50°C to
    –30°C

    +50°C to
    –30°C

    diode structure

    Inject boron - NtypeSiinjected as partially depleted

    Inject boron - NtypeSiinjected as partially depleted

    Nominal equivalent ** window cutoff energy

    incident
    500 Å Si

    incident
    500 Å Si

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