Si charged particle radiation detectors for research applications

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Brief description:ORTEC offers a variety of depletion thickness silicon barrier detectors to meet the needs of numerous research applications

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ORTEC offers silicon surface barrier detectors in a variety of depletion thicknesses to meet the needs of numerous research applications.

*All resolution measurements performed and guaranteed at 21±1°C.

**Measured using 5.486-MeV natural alpha particles.

	A Series	B Series
Main applications	High-resolution charged particle spectroscopy measurements (nuclear physics and radiochemistry , space physics)	Particle identification, telescope detectors (nuclear physics and radiochemistry, space physics)
Detector type	Partially depleted silicon barrier	Fully depleted silicon barrier
starting materials	Si	Si
Effective area range (mm²)	25-450	50-450
Effective thickness range (µm)	1000-2000	150-2000
Guaranteed operating temperature range*	+25°C to –30°C	+25°C to –30°C
diode structure	gold - NSilicon-aluminum partial depletion	gold - Ntype silicon aluminum fully depleted
Nominal equivalent window cutoff energy**	entrance 800 Å Si	entrance 800 Å Si export 2250 Å Si

	C Series	D Series
Main applications	Backscattering from a collimated light source or beam - Angle-dependent measurements (nuclear physics)	Time-of-flight measurements of heavy ions (nuclear physics)
Detector type	Annular partially depleted silicon barrier	Planar fully depleted silicon barrier
starting materials	Si	Si
Effective area range (mm²)	50-450	10-450
Effective thickness range (µm)	100-1000	15-100
Guaranteed operating temperature range*	25°C to –30°C	10°C to 25°C
diode structure	gold - NSilicon-aluminum partial depletion	gold - NType SiAl fully depleted plane
Nominal equivalent window cutoff energy**	entrance 800 Å Si export 2250 Å Si	entrance 800 Å Si export 2250 Å Si

	F Series	R Series
Main applications	Heavy ion spectroscopy measurements (nuclear physics)	Charged particle spectroscopy measurements in air and ambient light
Detector type	Partially depleted silicon barrier	ruggedized partially depleted silicon
starting materials	Si	Si
Effective area range (mm²)	100-900	50-2000
Effective thickness range (µm)	≥60	100-500
Guaranteed operating temperature range*	+25°C to –30°C	+25°C to –30°C
diode structure	gold - NType SiAl partially depleted high field strength	Aluminum - Ptype silicon gold partially depleted
Nominal equivalent window cutoff energy**	entrance 800 Å Si	entrance 2300 Å Si

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